Influence of Turn-off Currents on Plasma Extraction Transit Time Oscillations in High-voltage IGBTs

被引：0
|
作者：
Gu M. [1 ]
Cui X. [1 ]
机构：
[1] State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing
来源：
Cui, Xiang (x.cui@ncepu.edu.cn) | 1600年 / Science Press卷 / 46期
关键词：
Condition monitoring; Graphical analysis; PETT; Press-pack IGBT; Self-excited oscillation; Tail current;
D O I：
10.13336/j.1003-6520.hve.20200430021
中图分类号：
学科分类号：
摘要：
Plasma extraction transit time (PETT) oscillations are a type of self-excited oscillations found in high-voltage bipolar devices and of important potential application value in the state monitoring of power semiconductor modules. Consequently, we investigated the oscillation waveform parameters that are significantly coupled to turn-off currents and analyzed the physical mechanism. A PETT oscillation test platform for high-voltage press-pack IGBT chips was designed and fabricated, and PETT oscillations between two IGBT chips were detected under different turn-off currents. The relationship between the turn-off current and a series of typical oscillation waveform parameters was presented. To explain the experimental rules, we proposed a new equivalent circuit of PETT oscillations and an intuitive graphical analysis method. From the experimental results, it is found that there are apparent monotonic coupling relationships between the turn-off current and the start time, peak time or end time of oscillations with the growth rate of about 0.1 μs/A, which can be adequately explained by the graphical analysis method. Furthermore, it is deduced that there is a linear relationship between the logarithmic value of the turn-off current and the start time, peak time or end time of oscillations, and the inference is confirmed by the experimental results. © 2020, High Voltage Engineering Editorial Department of CEPRI. All right reserved.
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页码：1291 / 1301
页数：10
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