Dynamic Self-Clamping at Short-Circuit Turn-Off of High-Voltage IGBTs

被引：0
|
作者：
Basler, Thomas [1 ]
Bhojani, Riteshkumar [1 ]
Lutz, Josef [1 ]
Jakob, Roland [2 ]
机构：
[1] Tech Univ Chemnitz, Chair Power Elect & EMC, Reichenhainer Str 70, D-09126 Chemnitz, Germany
[2] GE Energy, Power Convers, D-12277 Berlin, Germany
来源：
2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2013年
关键词：
RUGGEDNESS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurements show that the IGBT is able to clamp the collector-emitter voltage to a certain value at short-circuit turn-off despite a very low gate turn-off resistor in combination with a high parasitic inductance is applied. The IGBT itself reduces the turn-off di(C) / dt by avalanche injection. However, device destructions during fast turn-off were observed which cannot be linked with an overvoltage failure mode. Measurements and semiconductor simulations of high-voltage IGBTs explain the self-clamping mechanism in detail. Possible failures which can be connected with filamentation processes are described. Options for improving the IGBT robustness during short-circuit turn-off are discussed.
引用
收藏
页码：277 / 280
页数：4
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