Explicit drain current model of junctionless double-gate field-effect transistors

被引：14
|
作者：
Yesayan, Ashkhen [1 ]
Pregaldiny, Fabien [2 ]
Sallese, Jean-Michel [3 ]
机构：
[1] Armenian Natl Acad Sci, Inst Radiophys & Elect, Ashtarak 0203, Armenia
[2] ICube Telecom Phys Strasbourg, F-67412 Illkirch Graffenstaden, France
[3] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland
来源：
SOLID-STATE ELECTRONICS | 2013年 / 89卷
基金：
瑞士国家科学基金会;
关键词：
JLFET; MOS devices; Compact modeling; Silicon devices;
D O I：
10.1016/j.sse.2013.07.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an explicit drain current model for the junctionless double-gate metal-oxide-semiconductor field-effect transistor. Analytical relationships for the channel charge densities and for the drain current are derived as explicit functions of applied terminal voltages and structural parameters. The model is validated with 2D numerical simulations for a large range of channel thicknesses and is found to be very accurate for doping densities exceeding 10(18) cm(-3), which are actually used for such devices. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：134 / 138
页数：5
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