Non-Quasi-Static Intrinsic GaN-HEMT Model

被引：6

作者：

Touchaei, Behnam Jafari ^{[1
]}

Shalchian, Majid ^{[1
]}

机构：

[1] Amirkabir Univ Technol, Tehran Polytech, Dept Elect Engn, Tehran 158754413, Iran

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 12期

关键词：

Gallium nitride (GaN); high electron mobility transistor (HEMT); non-quasi-static (NQS); small-signal model; trans-admittance parameters; EXTRACTION; TRANSPORT;

D O I：

10.1109/TED.2022.3211485

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a small-signal model of intrinsic gallium nitride high electron mobility transistor (GaN HEMT) for non-quasi-static analysis. The model is derived from the charge-based approach presented in the EPFL HEMT analytical model. The results are obtained in the form of trans-admittance parameters for a two-port network. The model takes into account the current continuity equation in the frequency domain and ignores short-channel effects. The results have been compared in a wide frequency range with technology computer-aided design (TCAD) simulation and show perfect agreement in all operating regions from linear to pinch-off.

引用

页码：6594 / 6601

页数：8

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