AN ANALYTICAL MODEL FOR THE NON-QUASI-STATIC SMALL-SIGNAL BEHAVIOR OF SUBMICRON MOSFETS

被引：24
|
作者：
SMEDES, T [1 ]
KLAASSEN, FM [1 ]
机构：
[1] EINDHOVEN UNIV TECHNOL,FAC ELECT ENGN,5600 MB EINDHOVEN,NETHERLANDS
来源：
SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 01期
关键词：
D O I：
10.1016/0038-1101(94)E0032-A
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new, analytical Non-Quasi-Static model, in terms of admittance parameters, for the small-signal behaviour of short channel MOSFETs is presented. The relevant short channel effects are included explicitly in the derivation of the model. The effects of approximating the exact analytical solutions are discussed. A new approximation for extremely high frequencies is proposed. The model is consistent with previously published low frequency models and shows good agreement with 2D device simulations and measurements. Finally the influence of parasitics is illustrated.
引用
收藏
页码：121 / 130
页数：10
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