Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

被引：2

作者：

Lee, Wooseok ^{[1
]}

Kang, Hyunuk ^{[1
]}

Choi, Seokgyu ^{[2
]}

Lee, Sangmin ^{[2
]}

Kwon, Hosang ^{[3
]}

Hwang, Keum Cheol ^{[1
]}

Lee, Kang-Yoon ^{[1
]}

Yang, Youngoo ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea

[2] Wavice Inc, Hwaseong Si 18449, South Korea

[3] Agcy Def Dev, Daejeon 34186, South Korea

来源：

ELECTRONICS | 2020年 / 9卷 / 04期

关键词：

GaN-HEMT; large-signal modeling; electro-magnetic simulation; power amplifier; scaled large-signal modeling; ALGAN/GAN HEMTS; AMPLIFIER;

D O I：

10.3390/electronics9040632

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements.

引用

页数：10

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