Scaled GaN-HEMT Large-Signal Model Based on EM Simulation

被引：2

作者：

Lee, Wooseok ^{[1
]}

Kang, Hyunuk ^{[1
]}

Choi, Seokgyu ^{[2
]}

Lee, Sangmin ^{[2
]}

Kwon, Hosang ^{[3
]}

Hwang, Keum Cheol ^{[1
]}

Lee, Kang-Yoon ^{[1
]}

Yang, Youngoo ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea

[2] Wavice Inc, Hwaseong Si 18449, South Korea

[3] Agcy Def Dev, Daejeon 34186, South Korea

来源：

ELECTRONICS | 2020年 / 9卷 / 04期

关键词：

GaN-HEMT; large-signal modeling; electro-magnetic simulation; power amplifier; scaled large-signal modeling; ALGAN/GAN HEMTS; AMPLIFIER;

D O I：

10.3390/electronics9040632

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a scaled GaN-HEMT large-signal model based on EM simulation. A large-signal model of the 10-finger GaN-HEMT consists of a large-signal model of the two-finger GaN-HEMT and an equivalent circuit of the interconnection circuit. The equivalent circuit of the interconnection circuit was extracted according to the EM simulation results. The large-signal model for the two-finger device is based on the conventional Angelov channel current model. The large-signal model for the 10-finger device was verified through load-pull measurement. The 10-finger GaN-HEMT produced an output power of about 20 W for both simulation and load-pull measurements.

引用

页数：10

共 50 条

[31] Approach for developing a large-signal model of a 150-GHz HEMT
Diskus, CG
Bergamaschi, C
Schefer, M
Patrick, W
Klepser, BUH
Bachtold, W
[J]. INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING, 1996, 6 (04): : 234 - 242
[32] A HEMT large-signal model for use in the design of microwave switching circuits
Tao, Yuan
Hu, Zhi Fu
Fan, Yong
[J]. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2020, 30 (03)
[33] A novel GaN-HEMT based inverter and cascode amplifier
Paul, Sritoma
Mondal, Shubham
Sarkar, Angsuman
[J]. PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES KOLKATA CONFERENCE (IEEE EDKCON), 2018, : 465 - 469
[34] Large-Signal Behavior Modeling of GaN P-HEMT Based on GA-ELM Neural Network
Shaowei Wang
Jincan Zhang
Min Liu
Bo Liu
Jinchan Wang
Shi Yang
[J]. Circuits, Systems, and Signal Processing, 2022, 41 : 1834 - 1847
[35] Large-Signal Behavior Modeling of GaN P-HEMT Based on GA-ELM Neural Network
Wang, Shaowei
Zhang, Jincan
Liu, Min
Liu, Bo
Wang, Jinchan
Yang, Shi
[J]. CIRCUITS SYSTEMS AND SIGNAL PROCESSING, 2022, 41 (04) : 1834 - 1847
[36] Large-signal HEMT modelling, specifically optimized for INP based HEMTs
Schreurs, D
Baeyens, Y
vanderZanden, K
Verspecht, J
VanHove, M
DeRaedt, W
Nauwelaers, B
VanRossum, M
[J]. 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 638 - 641
[37] THz modulators based on the active GaN-HEMT metasurface
Zhao, Yuncheng
Zhang, Yaxin
Liang, Shixiong
Feng, Zhihong
Yang, Ziqiang
[J]. 2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2018,
[38] An Improved Large-Signal Equivalent Circuit Model for GaN HEMTs
Meng, Chang
Sun, Lu
Cao, Jie
Zhan, Jinsong
Nian, Fushun
[J]. 2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019), 2019,
[39] Non-Quasi-Static Intrinsic GaN-HEMT Model
Touchaei, Behnam Jafari
Shalchian, Majid
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (12) : 6594 - 6601
[40] A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects
Wen, Zhang
Xu, Yuehang
Wang, Changsi
Zhao, Xiaodong
Chen, Zhikai
Xu, Ruimin
[J]. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2017, 30 (01)

← 1 2 3 4 5 →