Non-Quasi-Static Intrinsic GaN-HEMT Model

被引：6
|
作者：
Touchaei, Behnam Jafari [1 ]
Shalchian, Majid [1 ]
机构：
[1] Amirkabir Univ Technol, Tehran Polytech, Dept Elect Engn, Tehran 158754413, Iran
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 12期
关键词：
Gallium nitride (GaN); high electron mobility transistor (HEMT); non-quasi-static (NQS); small-signal model; trans-admittance parameters; EXTRACTION; TRANSPORT;
D O I：
10.1109/TED.2022.3211485
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents a small-signal model of intrinsic gallium nitride high electron mobility transistor (GaN HEMT) for non-quasi-static analysis. The model is derived from the charge-based approach presented in the EPFL HEMT analytical model. The results are obtained in the form of trans-admittance parameters for a two-port network. The model takes into account the current continuity equation in the frequency domain and ignores short-channel effects. The results have been compared in a wide frequency range with technology computer-aided design (TCAD) simulation and show perfect agreement in all operating regions from linear to pinch-off.
引用
收藏
页码：6594 / 6601
页数：8
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