Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI process

被引：1

作者：

Mika, Nicki ^{[1
]}

Melde, Thomas ^{[1
]}

Duenkel, Stefan ^{[1
]}

Otto, Michael ^{[1
]}

Weisbuch, Francois ^{[1
]}

Krottenthaler, Peter ^{[1
]}

Mikolajick, Thomas ^{[2
]}

机构：

[1] Module One LLC & Co KG GlobalFoundries Dresden, Dresden, Germany

[2] Tech Univ Dresden, Chair Nanoelect, Dresden, Germany

来源：

ESSDERC 2022 - IEEE 52ND EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC) | 2022年

关键词：

floating gate; embedded flash; NVM; MTPM; ESF3; SOI;

D O I：

10.1109/ESSDERC55479.2022.9947160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As minimum feature sizes in semiconductor processes are continuously decreasing, the parallel implementation of embedded non-volatile memory cells becomes increasingly complex for technology nodes below 28 nm. In this publication it is demonstrated the first ESF3 fabrication in an advanced SOI process using the buried oxide as a tunnel oxide. This enables a small cell area of 0.086 mu m(2) with only few additional process steps and promising electrical data.

引用

页码：356 / 359

页数：4

共 20 条

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