All-optical logic gates using nonlinear effects in silicon-on-insulator waveguides

被引：35

作者：

Khorasaninejad, Mohammadreza ^{[1
]}

Saini, Simarjeet Singh ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

APPLIED OPTICS | 2009年 / 48卷 / 25期

关键词：

RAMAN-SCATTERING; GAIN; ABSORPTION; AMPLIFICATION; MODULATION;

D O I：

10.1364/AO.48.000F31

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We propose multiple all-optical logic operations in complementary metal oxide semiconductor compatible silicon-on-insulator waveguides based on three nonlinear phenomena, stimulated Raman scattering, free carrier absorption, and cross phase modulation. The performance of three optical logic operations is simulated by use of the finite-difference time-domain method. We achieved an extinction ratio of approximately 13 dB between two logic levels. (C) 2009 Optical Society of America

引用

页码：F31 / F36

页数：6

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