Thin Film GaN LEDs Using a Patterned Oxide Sacrificial Layer by Chemical Lift-Off Process

被引：12

作者：

Chuang, Shih-Hao ^{[1
]}

Pan, Chun-Ting ^{[1
]}

Shen, Kun-Ching ^{[1
]}

Ou, Sin-Liang ^{[1
]}

Wuu, Dong-Sing ^{[1
,2
]}

Horng, Ray-Hua ^{[3
,4
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan

[2] Da Yeh Univ, Dept Mat Sci & Engn, Changhua 51591, Taiwan

[3] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 40227, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 24期

关键词：

Chemical lift-off; electroplating; epitaxial lateral overgrowth; light-emitting diode (LED); strip-patterned SiO2;

D O I：

10.1109/LPT.2013.2287892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-quality GaN-based vertical light-emitting diode (LED) was successfully fabricated and transferred to an electroplated Cu substrate using strip-patterned silicon dioxide (SiO2) as a sacrificial layer in a chemical lift-off (CLO) process. The SiO2 strip patterns not only provide the sacrificial structure during the detachment process, but also improve the quality of GaN epilayers through epitaxial lateral overgrowth. Compared with conventional LEDs, the CLO-LEDs have a higher output power and a lower forward voltage. The CLO-LED has a decrease in forward voltage of 0.42 V (at 20 mA) as compared with the conventional LED. In addition, at a drive current of 350 mA, the output power of CLO-LEDs is enhanced similar to 2.2 fold, compared with that of conventional LEDs.

引用

页码：2435 / 2438

页数：4

共 50 条

[21] Thin film patterning by laser lift-off
Chen, XK
Morimoto, A
Kumeda, M
Shimizu, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (5A): : 3099 - 3100
[22] Pt/Ti electrodes of PZT thin films Patterning by novel lift-off using ZnO as a sacrificial layer
Li Jun-Hong
Wang Cheng-Hao
Xu Lian
Xie Shu
CHINESE PHYSICS LETTERS, 2008, 25 (01) : 310 - 313
[23] Thin film patterning by laser lift-off
Chen, Xuekang
Morimoto, Akiharu
Kumeda, Minoru
Shimizu, Tatsuo
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (5 A): : 3099 - 3100
[24] Thick film MEMS process using reverse lift-off
Takase, S.
Yamada, K.
Nakagawa, Y.
Oka, C.
Sakurai, J.
Hata, S.
MICROELECTRONIC ENGINEERING, 2023, 281
[25] Fine-patterning of sol-gel derived PZT film by a novel lift-off process using solution-processed metal oxide as a sacrificial layer
Phan Trong Tue
Shimoda, Tatsuya
Takamura, Yuzuru
CERAMICS INTERNATIONAL, 2016, 42 (16) : 18431 - 18435
[26] Transferring Thin Film GaN LED Epi-Structure to the Cu Substrate by Chemical Lift-Off Technology
Horng, Ray-Hua
Pan, Chun-Ting
Tsai, Tsung-Yen
Wuu, Dong-Sing
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (07) : H281 - H284
[27] OPTICAL SINGLE LAYER LIFT-OFF PROCESS
MORITZ, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 672 - 676
[28] Patterned water dispersible conducting polymer electrode in organic thin film transistor through a parylene lift-off process
Nair, Shiny
Kathiresan, M.
Mukundan, T.
SYNTHETIC METALS, 2017, 234 : 29 - 37
[29] Demonstration of Thin-Film GaN Schottky Diodes Fabricated with Epitaxial Lift-Off
Wang, J.
Youtsey, C.
McCarthy, R.
Reddy, R.
Guido, L.
Xie, A.
Beam, E.
Fay, P.
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2016,
[30] Mask reduction process by chemical lift-off
Liao, Chin-yueh
Yang, Chih-chun
Fang, Kuo-lung
Jan, Shiun-chang
Lin, Han-tu
Chen, Chien-hung
IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007, 2007, : 581 - 584

← 1 2 3 4 5 →