Mask reduction process by chemical lift-off

被引：0

作者：

Liao, Chin-yueh ^{[1
]}

Yang, Chih-chun ^{[1
]}

Fang, Kuo-lung ^{[1
]}

Jan, Shiun-chang ^{[1
]}

Lin, Han-tu ^{[1
]}

Chen, Chien-hung ^{[1
]}

机构：

[1] AU Optron, AUO Technol Ctr, Hsinchu, Taiwan

来源：

IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reducing manufacturing steps in recent years had become a costdown trend for many main TFT- LCD manufacturers. We proposed mask reduction process by chemical lift-off. Based on conventional 4 PEP process, active layer and source/drain layer can be combined into only one photolithography process by using GTM (Gray tone mask) or HTM(Half tone mask). Then, the passivation layer and transparent conducting layer, such as ITO or IZO, can be combined into one photolithography step by adopting chemical lift-off. In this pape, we will discuss the feasibility of chemical lift-off. Stripping time and stripping path are key factors affecting chemical lift-off. More stripping paths for chemical lift-off would be more crucial than increasing stripping time. Simultaneously increasing stripping paths and stripping time will lead to better chemical lift-off performances. We have successfully exploited the mask reduction technology by using chemical lift-off process.

引用

页码：581 / 584

页数：4

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