Thin Film GaN LEDs Using a Patterned Oxide Sacrificial Layer by Chemical Lift-Off Process

被引：12
|
作者：
Chuang, Shih-Hao [1 ]
Pan, Chun-Ting [1 ]
Shen, Kun-Ching [1 ]
Ou, Sin-Liang [1 ]
Wuu, Dong-Sing [1 ,2 ]
Horng, Ray-Hua [3 ,4 ]
机构：
[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 40227, Taiwan
[2] Da Yeh Univ, Dept Mat Sci & Engn, Changhua 51591, Taiwan
[3] Natl Chung Hsing Univ, Grad Inst Precis Engn, Taichung 40227, Taiwan
[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 24期
关键词：
Chemical lift-off; electroplating; epitaxial lateral overgrowth; light-emitting diode (LED); strip-patterned SiO2;
D O I：
10.1109/LPT.2013.2287892
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-quality GaN-based vertical light-emitting diode (LED) was successfully fabricated and transferred to an electroplated Cu substrate using strip-patterned silicon dioxide (SiO2) as a sacrificial layer in a chemical lift-off (CLO) process. The SiO2 strip patterns not only provide the sacrificial structure during the detachment process, but also improve the quality of GaN epilayers through epitaxial lateral overgrowth. Compared with conventional LEDs, the CLO-LEDs have a higher output power and a lower forward voltage. The CLO-LED has a decrease in forward voltage of 0.42 V (at 20 mA) as compared with the conventional LED. In addition, at a drive current of 350 mA, the output power of CLO-LEDs is enhanced similar to 2.2 fold, compared with that of conventional LEDs.
引用
收藏
页码：2435 / 2438
页数：4
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