Possibility of strain control in AlN layer grown by MOVPE on (0001) 6H-SiC with GaN/AlN buffer

被引：0

作者：

Kurimoto, M ^{[1
]}

Nakada, T ^{[1
]}

Ishihara, Y ^{[1
]}

Shibata, M ^{[1
]}

Takano, T ^{[1
]}

Yamamoto, J ^{[1
]}

Honda, T ^{[1
]}

Kawanishi, H ^{[1
]}

机构：

[1] Kohgakuin Univ, Dept Elect Engn, Hachioji, Tokyo 1920015, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1999年 / 176卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-396X(199911)176:1<665::AID-PSSA665>3.0.CO;2-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A tensile-strained AlN layer along the a-axis was grown on a (0001)6H-SiC substrate with a (GaN/AlN) buffer layer by metalorganic vapor phase epitaxy using an alternating source feeding (ASF) technique. It was experimentally demonstrated that the strain in-the AlN layer was affected by the growrh conditions of the buffer layer. On the other hand, the AlN layer grown directly on a substrate without the buffer layer exhibits compressive strain along the a-asis. Strain control in the AlN layer using the ASF buffer is proposed.

引用

页码：665 / 669

页数：5

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