Possibility of strain control in AlN layer grown by MOVPE on (0001) 6H-SiC with GaN/AlN buffer

被引：0

作者：

Kurimoto, M ^{[1
]}

Nakada, T ^{[1
]}

Ishihara, Y ^{[1
]}

Shibata, M ^{[1
]}

Takano, T ^{[1
]}

Yamamoto, J ^{[1
]}

Honda, T ^{[1
]}

Kawanishi, H ^{[1
]}

机构：

[1] Kohgakuin Univ, Dept Elect Engn, Hachioji, Tokyo 1920015, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1999年 / 176卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-396X(199911)176:1<665::AID-PSSA665>3.0.CO;2-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A tensile-strained AlN layer along the a-axis was grown on a (0001)6H-SiC substrate with a (GaN/AlN) buffer layer by metalorganic vapor phase epitaxy using an alternating source feeding (ASF) technique. It was experimentally demonstrated that the strain in-the AlN layer was affected by the growrh conditions of the buffer layer. On the other hand, the AlN layer grown directly on a substrate without the buffer layer exhibits compressive strain along the a-asis. Strain control in the AlN layer using the ASF buffer is proposed.

引用

页码：665 / 669

页数：5

共 50 条

[21] Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique
Shi, Y
Xie, ZY
Liu, LH
Liu, B
Edgar, JH
Kuball, M
JOURNAL OF CRYSTAL GROWTH, 2001, 233 (1-2) : 177 - 186
[22] Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates
Reitmeier, Z. J.
Einfeldt, S.
Davis, R. F.
Zhang, Xinyu
Fang, Xialong
Mahajan, S.
ACTA MATERIALIA, 2009, 57 (14) : 4001 - 4008
[23] Morphological control of GaN buffer layers grown by molecular beam epitaxy on 6H-SiC(0001)
Hu, CW
Smith, DJ
Doak, RB
Tsong, IST
SURFACE REVIEW AND LETTERS, 2000, 7 (5-6) : 565 - 570
[24] Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films
Hartman, JD
Roskowski, AM
Reitmeier, ZJ
Tracy, KM
Davis, RF
Nemanich, RJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (02): : 394 - 400
[25] Effects of the AlN nucleation layer thickness on the crystal structures of an AlN epilayer grown on the 6H-SiC substrate
Arslan, Engin
Ozturk, Mustafa K.
Ozcelik, Sueleyman
Ozbay, Ekmel
PHILOSOPHICAL MAGAZINE, 2019, 99 (14) : 1715 - 1731
[26] Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayers grown on 6H-SiC(0001) by molecular-beam epitaxy
Jeganathan, K
Shimizu, M
Okumura, H
JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)
[27] Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayers grown on 6H-SiC (0001) by molecular-beam epitaxy
Jeganathan, K.
Shimizu, M.
Okumura, H.
Journal of Applied Physics, 2005, 97 (01):
[28] Electrical characterization of metal AlN/6H-SiC (0001) heterostructures
Aboelfotoh, MO
Kern, RS
Davis, RF
1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 382 - 389
[29] Relaxation phenomena in GaN/AlN/6H-SiC heterostructures
Edwards, NV
Batchelor, AD
Buyanova, IA
Madsen, LD
Bremser, MD
Davis, RF
Aspnes, DE
Monemar, B
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
[30] Seeded Growth of AlN on (0001)-plane 6H-SiC Substrates
Filip, O.
Epelbaum, B. M.
Bickermann, M.
Heimann, P.
Nagata, S.
Winnacker, A.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 983 - 986

← 1 2 3 4 5 →