On-Chip Environmental Sensors for Bias Drift Compensation

被引：0

作者：

Guney, Metin G. ^{[1
]}

Chung, Vincent Pey J. ^{[1
]}

Mukherjee, Tamal ^{[1
]}

Fedder, Gary K. ^{[1
,2
]}

机构：

[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[2] Carnegie Mellon Univ, Inst Robot, Pittsburgh, PA 15213 USA

来源：

2017 IEEE SENSORS | 2017年

关键词：

MEMS; CMOS-MEMS; environmental sensors; inertial sensors; drift compensation; ACCELEROMETER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the simulation, design and functional verification of high resolution on-chip environmental sensors in a 0.18 mu m CMOS process. The environmental sensors include n-type piezoresistive stress sensors with measured 0.9 kPa normal stress resolution, p-type piezoresistive stress sensors with 4.5 kPa normal stress resolution and Proportional to Absolute Temperature (PTAT) sensors with 6.5 mK resolution. The full accelerometer system on chip integrates a CMOS-MEMS accelerometer array, a pre-amplifier and the sensors. Finite element analysis provides an estimate of the required temperature and stress resolution for stabilizing the accelerometer scale factor up to 1 ppm, which informs the required noise floor for the environmental sensors. Test results from the designed sensors match the expected resolution closely.

引用

页码：564 / 566

页数：3

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