On-Chip Environmental Sensors for Bias Drift Compensation

被引：0
|
作者：
Guney, Metin G. [1 ]
Chung, Vincent Pey J. [1 ]
Mukherjee, Tamal [1 ]
Fedder, Gary K. [1 ,2 ]
机构：
[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
[2] Carnegie Mellon Univ, Inst Robot, Pittsburgh, PA 15213 USA
来源：
2017 IEEE SENSORS | 2017年
关键词：
MEMS; CMOS-MEMS; environmental sensors; inertial sensors; drift compensation; ACCELEROMETER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on the simulation, design and functional verification of high resolution on-chip environmental sensors in a 0.18 mu m CMOS process. The environmental sensors include n-type piezoresistive stress sensors with measured 0.9 kPa normal stress resolution, p-type piezoresistive stress sensors with 4.5 kPa normal stress resolution and Proportional to Absolute Temperature (PTAT) sensors with 6.5 mK resolution. The full accelerometer system on chip integrates a CMOS-MEMS accelerometer array, a pre-amplifier and the sensors. Finite element analysis provides an estimate of the required temperature and stress resolution for stabilizing the accelerometer scale factor up to 1 ppm, which informs the required noise floor for the environmental sensors. Test results from the designed sensors match the expected resolution closely.
引用
收藏
页码：564 / 566
页数：3
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