High cooling power density of SiGe/Si supertattice microcoolers

被引：0

作者：

Zeng, GH ^{[1
]}

Fan, XF ^{[1
]}

LaBounty, C ^{[1
]}

Bowers, JE ^{[1
]}

Croke, E ^{[1
]}

Christofferson, J ^{[1
]}

Vashaee, D ^{[1
]}

Zhang, Y ^{[1
]}

Shakouri, A ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

THERMOELECTRIC MATERIALS 2001-RESEARCH AND APPLICATIONS | 2001年 / 691卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fabrication and characterization of SiGe/Si superlattice microcoolers integrated with thin film resistors are described. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity, and by providing selective emission of hot carriers through thermionic emission. Thin film metal resistors were integrated on top of the cooler devices and they were used as heat load for cooling power density measurement. Various device sizes were characterized. Net cooling over 4.1 K and a cooling power density of 598 W/cm(2) for 40 x 40 mum(2) devices were measured at room temperature.

引用

页码：147 / 152

页数：6

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