High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

被引：14
|
作者：
Pottrain, Alexandre [1 ]
Lacave, Thomas [1 ]
Ducatteau, Damien [2 ]
Gloria, Daniel [1 ]
Chevalier, Pascal [1 ]
Gaquiere, Christophe [2 ]
机构：
[1] STMicroelectronics, F-38920 Crolles, France
[2] Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 02期
关键词：
BiCMOS; load pull; SiGe HBTs; W-band; GHZ;
D O I：
10.1109/LED.2011.2177631
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report load pull measurements on SiGe HBTs at 94 GHz. Nowadays, this kind of device exhibits F-MAX above 400 GHz and thus has a growing interest for W-band applications. A load pull test bench is developed for the characterization of this device with special care on architecture and calibration procedure for accurate measurements in 75-110 GHz. The device was characterized under large signal operation showing attractive performance for power amplifier design. A state-of-the-art power density of 18.5 mW/mu m(2) at 1-dB compression has been obtained at 94 GHz.
引用
收藏
页码：182 / 184
页数：3
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