94-GHz Load Pull measurements of SiGe HBT by extracting output power density in W-Band

被引：0

作者：

Hasnaoui, Issam ^{[1
]}

Canderle, Elodie ^{[1
,2
]}

Chevalier, Pascal ^{[2
]}

Gloria, Daniel ^{[2
]}

Gaquiere, Christophe ^{[1
]}

机构：

[1] Univ Lille 1, Ctr Hyperfrequences & Semicond, CNRS, Microwave Power Devices Grp,IEMN,UMR 8520, F-59655 Villeneuve Dascq, France

[2] STMicroelectron, F-38926 Crolles, France

来源：

2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年

关键词：

Load Pull; SiGe HBTs; BiCMOS; W-band; hot Sparameter; GHZ;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on last-generation SiGe HBTs by extracting the input reflection hot S-parameter (S' 11), in order to understand the mechanisms of power behavior in the presence of millimeter-wave excitations. The device under test (0.12x4.9 mu m(2)) was characterized under large signal load pull showing attractive performance for power amplifier design. A state-of-the-art power density of 22.26 mW/mu m(2) has been extracted at 94 GHz.

引用

页码：1371 / 1374

页数：4

共 34 条

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