94-GHz Load Pull measurements of SiGe HBT by extracting output power density in W-Band

被引：0
|
作者：
Hasnaoui, Issam [1 ]
Canderle, Elodie [1 ,2 ]
Chevalier, Pascal [2 ]
Gloria, Daniel [2 ]
Gaquiere, Christophe [1 ]
机构：
[1] Univ Lille 1, Ctr Hyperfrequences & Semicond, CNRS, Microwave Power Devices Grp,IEMN,UMR 8520, F-59655 Villeneuve Dascq, France
[2] STMicroelectron, F-38926 Crolles, France
来源：
2013 EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2013年
关键词：
Load Pull; SiGe HBTs; BiCMOS; W-band; hot Sparameter; GHZ;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on last-generation SiGe HBTs by extracting the input reflection hot S-parameter (S' 11), in order to understand the mechanisms of power behavior in the presence of millimeter-wave excitations. The device under test (0.12x4.9 mu m(2)) was characterized under large signal load pull showing attractive performance for power amplifier design. A state-of-the-art power density of 22.26 mW/mu m(2) has been extracted at 94 GHz.
引用
收藏
页码：1371 / 1374
页数：4
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