High-temperature epitaxy of PtSi/Si(001)

High-temperature epitaxy of PtSi/Si(001) interfaces has been investigated by ultra-high-vacuum transmission electron microscopy for deposition temperatures up to 850 degrees C. At 600 degrees C continuous, polycrystalline, epitaxial films are observed with rectangular grains (10 x 30 nm), with the predominant, preferred orientation PtSi(110). By 750 degrees C the grains form islands which elongate in the PtSi[001] direction parallel the Si[110]. A strong shape anisotropy develops with length-to-width ratios of up to 100. Interface faceting is detected and observed in all islands by 810 degrees C and the preferred orientation changes to predominantly (120). The alignment of the PtSi(002) planes with the Si(220) planes is preserved at all temperatures and orientations.