High-temperature epitaxy of PtSi/Si(001)

被引：43

作者：

Kavanagh, KL ^{[1
]}

Reuter, MC ^{[1
]}

Tromp, RM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 173卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0022-0248(96)01047-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-temperature epitaxy of PtSi/Si(001) interfaces has been investigated by ultra-high-vacuum transmission electron microscopy for deposition temperatures up to 850 degrees C. At 600 degrees C continuous, polycrystalline, epitaxial films are observed with rectangular grains (10 x 30 nm), with the predominant, preferred orientation PtSi(110). By 750 degrees C the grains form islands which elongate in the PtSi[001] direction parallel the Si[110]. A strong shape anisotropy develops with length-to-width ratios of up to 100. Interface faceting is detected and observed in all islands by 810 degrees C and the preferred orientation changes to predominantly (120). The alignment of the PtSi(002) planes with the Si(220) planes is preserved at all temperatures and orientations.

引用

页码：393 / 401

页数：9

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