GaN/AlGaN high electron mobility transistors with fτ of 110GHz

被引：91

作者：

Micovic, M ^{[1
]}

Nguven, NX ^{[1
]}

Janke, P ^{[1
]}

Wong, WS ^{[1
]}

Hashimoto, P ^{[1
]}

McCray, LM ^{[1
]}

Nguyen, C ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 04期

关键词：

D O I：

10.1049/el:20000296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of 50nm gate length GaN/AlGaN HEMTs is reported. The device layers were grown by MBE directly onto an SiC substrate. Devices exhibit a maximum drain current density of 1.2A/mm. an extrinsic f(tau) of 110GHz and an f(max) of over 140GHz. The f(tau), of 110GHz is the highest reported to date for a GaN/AlGaN HEMT, a nearly 50% increase over the previous record.

引用

页码：358 / 359

页数：2

共 50 条

[31] Measurement of frequency dispersion of AlGaN/GaN high electron mobility transistors
Mizutani, T., 1600, Japan Society of Applied Physics (42):
[32] Measurement of frequency dispersion of AlGaN/GaN high electron mobility transistors
Mizutani, T
Makihara, H
Akita, M
Ohno, Y
Kishimoto, S
Maezawa, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2A): : 424 - 425
[33] Detection of halide ions with AlGaN/GaN high electron mobility transistors
Kang, BS
Ren, F
Kang, MC
Lofton, C
Tan, WH
Pearton, SJ
Dabiran, A
Osinsky, A
Chow, PP
APPLIED PHYSICS LETTERS, 2005, 86 (17) : 1 - 3
[34] Impedance Characterization of AlGaN/GaN/Si High Electron Mobility Transistors
Mosbahi, H.
Gassoumi, M.
Zaidi, M. A.
SILICON, 2022, 14 (08) : 3899 - 3903
[35] Thermal effects in AlGaN/GaN/Si high electron mobility transistors
Saidi, I.
Cordier, Y.
Chmielowska, M.
Mejri, H.
Maaref, H.
SOLID-STATE ELECTRONICS, 2011, 61 (01) : 1 - 6
[36] Mechanical Analysis of Stretchable AlGaN/GaN High Electron Mobility Transistors
Tompkins, R. P.
Mahaboob, I.
Shahedipour-Sandvik, F.
Lazarus, N.
WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 17, 2016, 72 (05): : 89 - 95
[37] Influence of Current Collapse in AlGaN/GaN High Electron Mobility Transistors
Patanvariya, Deven G.
Kumar, Sudhan
Giri, Lalat Indu
2019 10TH INTERNATIONAL CONFERENCE ON COMPUTING, COMMUNICATION AND NETWORKING TECHNOLOGIES (ICCCNT), 2019,
[38] Electrical characterization of AlGaN/GaN/Si high electron mobility transistors
Mosbahi, H.
Gassoumi, M.
Guesmi, A.
Bchetnia, A.
Zaidi, M. A.
JOURNAL OF OVONIC RESEARCH, 2022, 18 (02): : 159 - 165
[39] Processes and device technologies for AlGaN/GaN high electron mobility transistors
Adesida, I.
Kumar, V.
Mohammed, F.
Wang, L.
Basu, A.
Kim, D. -H.
Lanford, W.
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 140 - +
[40] Low temperature characteristics of AlGaN/GaN high electron mobility transistors
Lin, D. F.
Wang, X. L.
Xiao, H. L.
Wang, C. M.
Qiang, L. J.
Feng, C.
Chen, H.
Hou, Q. F.
Deng, Q. W.
Bi, Y.
Kang, H.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 56 (01):

← 1 2 3 4 5 →