Processes and device technologies for AlGaN/GaN high electron mobility transistors

被引：0
|
作者：
Adesida, I. [1 ]
Kumar, V. [1 ]
Mohammed, F. [1 ]
Wang, L. [1 ]
Basu, A. [1 ]
Kim, D. -H. [1 ]
Lanford, W. [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
来源：
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The AlInGaN-based high electron mobility transistor (HEMT) has proven to be the leading candidate for simultaneously realizing ultra-high frequency and ultra-high power amplifiers. The potential for these devices extends into operation in the mm-wave regime. Processes and device technologies that have resulted in these tremendous improvements are addressed.
引用
收藏
页码：140 / +
页数：2
相关论文
共 50 条
  • [1] Fabrication of AlGaN/GaN high electron mobility transistors
    Wu, T
    Hao, ZB
    Guo, WP
    Wu, SW
    Luo, Y
    Zeng, QM
    Li, XJ
    APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS, 2002, 4905 : 335 - 337
  • [2] Model the AlGaN/GaN High Electron Mobility Transistors
    Wang, Yan
    Cheng, Xiaoxu
    Li, Xiaojian
    NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, 2012, : 738 - 743
  • [3] Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
    A. P. Zhang
    L. B. Rowland
    E. B. Kaminsky
    V. Tilak
    J. C. Grande
    J. Teetsov
    A. Vertiatchikh
    L. F. Eastman
    Journal of Electronic Materials, 2003, 32 : 388 - 394
  • [4] Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors
    Zhang, AP
    Rowland, LB
    Kaminsky, EB
    Tilak, V
    Grande, JC
    Teetsov, J
    Vertiatchikh, A
    Eastman, LF
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 388 - 394
  • [5] Electrothermal analysis of AlGaN/GaN high electron mobility transistors
    Sridharan, Sriraaman
    Venkatachalam, Anusha
    Yoder, P. D.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2008, 7 (03) : 236 - 239
  • [6] Degradation characteristics of AlGaN/GaN high electron mobility transistors
    Kim, H
    Tilak, V
    Green, BM
    Cha, HY
    Smart, JA
    Shealy, JR
    Eastman, LF
    39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, : 214 - 218
  • [7] DC characteristics of AlGaN/GaN high electron mobility transistors
    Inada, Masaki
    Nakajima, Akira
    Piao, Guanxi
    Shimizu, Mitsuaki
    Yano, Yoshiki
    Ubukata, Akinori
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 2991 - +
  • [8] Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon
    Roensch, Sebastian
    Sizov, Victor
    Yagi, Takuma
    Murad, Saad
    Groh, Lars
    Lutgen, Stephan
    Sickmoeller, Markus
    Krieger, Michael
    Weber, Heiko B.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1180 - +
  • [9] Reliability Issues in AlGaN/GaN High Electron Mobility Transistors
    Douglas, E. A.
    Liu, L.
    Lo, C. F.
    Gila, B. P.
    Ren, F.
    Pearton, S. J.
    STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53), 2011, 41 (06): : 51 - 61
  • [10] Electrothermal analysis of AlGaN/GaN high electron mobility transistors
    Sriraaman Sridharan
    Anusha Venkatachalam
    P. D. Yoder
    Journal of Computational Electronics, 2008, 7 : 236 - 239
12345