GaN/AlGaN high electron mobility transistors with fτ of 110GHz

被引：91

作者：

Micovic, M ^{[1
]}

Nguven, NX ^{[1
]}

Janke, P ^{[1
]}

Wong, WS ^{[1
]}

Hashimoto, P ^{[1
]}

McCray, LM ^{[1
]}

Nguyen, C ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 04期

关键词：

D O I：

10.1049/el:20000296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of 50nm gate length GaN/AlGaN HEMTs is reported. The device layers were grown by MBE directly onto an SiC substrate. Devices exhibit a maximum drain current density of 1.2A/mm. an extrinsic f(tau) of 110GHz and an f(max) of over 140GHz. The f(tau), of 110GHz is the highest reported to date for a GaN/AlGaN HEMT, a nearly 50% increase over the previous record.

引用

页码：358 / 359

页数：2

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