Room Temperature Ferromagnetism of Mn Implanted AlInN

被引：5
|
作者：
Majid, Abdul [1 ,2 ]
Sharif, Rehana [3 ]
Ali, Akbar [2 ]
Zhu, Jian Jun [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad 45320, Pakistan
[3] Univ Engn & Technol, Dept Phys, Lahore, Pakistan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期
基金：
中国国家自然科学基金;
关键词：
MAGNETIC-PROPERTIES; SEMICONDUCTORS; GAN; CR; ALLOYS; GROWTH; FILMS;
D O I：
10.1143/JJAP.48.040202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ferromagnetic properties of Mn-implanted wurtzite Al(x)In(1-x)N/GaN thin films grown by metal organic chemical vapor deposition (MOCVD) were observed using a quantum design superconducting quantum interference device (SQUID) magnetometer. Hysteresis behavior with a reasonably high saturation magnetic moment at room temperature for all the samples was noted, Two optical thresholds were observed at 1.58 and 2.64 eV, which are attributed to internal transition ((5)E -> (5)T(2)) of Mn(3+) (d(4)) and hole emission from the neutral Mn acceptor level to the valence band respectively. Bound magnetic polaron formation is considered to be the origin of ferromagnetism in our samples. (c) 2009 The Japan Society of Applied Physics
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页数：3
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