Room temperature ferromagnetism in Mn ion implanted epitaxial ZnO films

被引：6

作者：

Hill, D. H.

Arena, D. A.

Bartynski, R. A. ^{[1
]}

Wu, P.

Saraf, G.

Lu, Y.

Wielunski, L.

Gateau, R.

Dvorak, J.

Moodenbaugh, A.

Yeo, Yung Kee

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

[2] Rutgers State Univ, Surface Modificat Lab, Piscataway, NJ 08854 USA

[3] Brookhaven Natl Lab, Natl Synchrotron Light Source, Upton, NY 11973 USA

[4] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[5] Montana State Univ, Dept Phys, Bozeman, MT 59717 USA

[6] Brookhaven Natl Lab, Dept Mat Sci, Upton, NY 11973 USA

[7] USAF, Inst Technol, Wright Patterson AFB, OH 45433 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 15期

关键词：

D O I：

10.1002/pssa.200622134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial ZnO films of similar to 450 nm thicknesses were grown by MOCVD on r-sapphire and doped by implantation of 200 keV Mn ions to a dose of 5 x 10(16) ions/cm(2). The structural, chemical, and magnetic properties of the films were investigated with X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), X-ray absorption spectroscopy (XAS) and SQUID magnetometry. XRD and RBS show both Mn-doped ZnO and pure ZnO epitaxial layers in the as-implanted film, which is ferromagnetic at 5 K but nonmagnetic at room temperature. For the as-implanted materials, only Mn2+ ions are observed with XAS. Post-implantation annealing partially recovers the lattice damage and redistributes Mn into the entire ZnO film; in addition, Mn2+ ions are converted to a mixture of Mn3+ and Mn4+, and ferromagnetism is now observed above 300 K. Our results show that ion implantation is a viable route for achieving room temperature ferromagnetism in epitaxial ZnO films. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3836 / 3843

页数：8

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