Enhancement of room temperature ferromagnetism in Mn-implanted Si by He implantation

被引：5

作者：

Chen, Jihong ^{[1
,2
]}

Guo, Liping ^{[1
,2
]}

Liu, Congxiao ^{[3
]}

Luo, Fengfeng ^{[1
,2
]}

Li, Tiecheng ^{[1
,2
]}

Zheng, Zhongcheng ^{[1
,2
]}

Jin, Shuoxue ^{[1
,2
]}

Yang, Zheng ^{[1
,2
]}

机构：

[1] Wuhan Univ, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Peoples R China

[2] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China

[3] Alabama A&M Univ, Dept Phys Chem & Math, Normal, AL 35762 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.4754712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature ferromagnetism in Mn-implanted p-Si was enhanced dramatically by implantation of He. A 75 nm end-of-range region was found in the sample, with large scale and inhomogeneous damaging but preserved Si lattice periodicity. The end-of-range region shows an intrinsic magnetization of similar to 100 emu/cm(3). High resolution transmission electron microscopy and x-ray photoelectron spectroscopy measurements indicate that the spin polarization of Si dangling bonds rather than Mn impurity was the major source for the enhanced magnetism. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754712]

引用

页数：4

共 50 条

[1] Research on the Mn-implanted GaN with ferromagnetism at room temperature
Xu, J
Li, J
Zhang, R
Xiu, XQ
Lu, DQ
Yu, HQ
Gu, SL
Shen, B
Shi, Y
Ye, YD
Zheng, YD
[J]. OPTICAL MATERIALS, 2003, 23 (1-2) : 163 - 167
[2] Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si
Orlov, A. F.
Granovsky, A. B.
Balagurov, L. A.
Kulemanov, I. V.
Parkhomenko, Yu. N.
Perov, N. S.
Gan'shina, E. A.
Bublik, V. T.
Shcherbachev, K. D.
Kartavykh, A. V.
Vdovin, V. I.
Sapelkin, A.
Saraikin, V. V.
Agafonov, Yu. A.
Zinenko, V. I.
Rogalev, A.
Smekhova, A.
[J]. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2009, 109 (04) : 602 - 608
[3] Improving Room-Temperature Ferromagnetism in Mn-Implanted Si by High-Temperature Annealing
Li, Tiecheng
Liu, Congxiao
Chen, Jihong
Peng, Guoliang
Luo, Fengfeng
Wen, Wen
Zhang, Jing
Guo, Liping
[J]. IEEE TRANSACTIONS ON MAGNETICS, 2015, 51 (06)
[4] Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si
A. F. Orlov
A. B. Granovsky
L. A. Balagurov
I. V. Kulemanov
Yu. N. Parkhomenko
N. S. Perov
E. A. Gan’shina
V. T. Bublik
K. D. Shcherbachev
A. V. Kartavykh
V. I. Vdovin
A. Sapelkin
V. V. Saraikin
Yu. A. Agafonov
V. I. Zinenko
A. Rogalev
A. Smekhova
[J]. Journal of Experimental and Theoretical Physics, 2009, 109 : 602 - 608
[5] Room-temperature ferromagnetism in Mn-implanted amorphous Ge
Ottaviano, L.
Continenza, A.
Profeta, G.
Impellizzeri, G.
Irrera, A.
Gunnella, R.
Kazakova, O.
[J]. PHYSICAL REVIEW B, 2011, 83 (13):
[6] Room-temperature ferromagnetism in Mn-implanted TiO2
Menzel, D.
Jursic, I.
Schoenes, J.
Iacomi, F.
Cacaina, D.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12, 2006, 3 (12): : 4119 - 4122
[7] Ferromagnetism in Mn-implanted Ge/Si Nanostructure Material
I. T. Yoon
C. J. Park
T. W. Kang
[J]. Journal of Superconductivity and Novel Magnetism, 2010, 23 : 115 - 119
[8] Ferromagnetism in Mn-implanted Ge/Si nanostructure material
Yoon, I. T.
Park, C. J.
Kang, T. W.
[J]. INTERNATIONAL CONFERENCE ON SUPERCONDUCTIVITY AND MAGNETISM (ICSM), 2009, 153
[9] Ferromagnetism in Mn-implanted Ge/Si Nanostructure Material
Yoon, I. T.
Park, C. J.
Kang, T. W.
[J]. JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2010, 23 (01) : 115 - 119
[10] Ferromagnetism in Mn-implanted epitaxially grown Ge on Si(100)
Guchhait, S.
Jamil, M.
Ohldag, H.
Mehta, A.
Arenholz, E.
Lian, G.
LiFatou, A.
Ferrer, D. A.
Markert, J. T.
Colombo, L.
Banerjee, S. K.
[J]. PHYSICAL REVIEW B, 2011, 84 (02):

← 1 2 3 4 5 →