Research on the Mn-implanted GaN with ferromagnetism at room temperature

被引：6

作者：

Xu, J ^{[1
]}

Li, J ^{[1
]}

Zhang, R ^{[1
]}

Xiu, XQ ^{[1
]}

Lu, DQ ^{[1
]}

Yu, HQ ^{[1
]}

Gu, SL ^{[1
]}

Shen, B ^{[1
]}

Shi, Y ^{[1
]}

Ye, YD ^{[1
]}

Zheng, YD ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Solid State Microstruct Lab, Nanjing 210093, Peoples R China

来源：

OPTICAL MATERIALS | 2003年 / 23卷 / 1-2期

关键词：

GaN; implantation; DMS; spintronics;

D O I：

10.1016/S0925-3467(03)00079-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Mn-implanted GaN with ferromagnetism at room temperature has been prepared successfully. The optical and structural properties of Mn-implanted GaN films have been investigated. The films studied were grown by metal organic chemical vapor deposition, with Mn implanted in 150 keV, which can offer many distinguished advantages compared with other doping methods. A new energy band with a minimum at 2.9 eV in the reflectance spectra has been observed. The yellow band emission was greatly decreased according to the result of photoluminescence. The results of vibrating sample magnetometer experiment proved the ferromagnetic properties of Mn-doped GaN at room temperature. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：163 / 167

页数：5

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