Formation of YMnO3 films directly on Si substrate

We have proposed YMnO3 thin films for nonvolatile memory devices, and succeeded in obtaining (001) epitaxial YMnO3 films on (111)MgO and (0001)ZnO:Al/(0001)sapphire substrates and polycrystalline films on (111)Pt/(111)MgO. For an optimal structure, the film needed much less oxygen from the gas phase compared to other oxide films. This paper describes pulsed-laser-deposited YMnO3 films on (111)Si investigated for metal-ferroelectric-semiconductor structure. By depositing an initial layer of deoxidized YMnO3-x films, we have succeeded in obtaining the preferred oriented-YMnO3 films on Si for the first time.