Formation of YMnO3 films directly on Si substrate

被引：12
|
作者：
Aoki, N
Fujimura, N
Yoshimura, T
Ito, T
机构：
[1] Dept. of Applied Materials Science, College of Engineering, Osaka Prefecture University, Sakai, Osaka 593
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期
关键词：
YMnO3; ferroelectrics; nonvolatile ferroelectric memory; Si substrate; metal-ferroelectric-semiconductor; pulsed laser deposition;
D O I：
10.1016/S0022-0248(97)00016-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have proposed YMnO3 thin films for nonvolatile memory devices, and succeeded in obtaining (001) epitaxial YMnO3 films on (111)MgO and (0001)ZnO:Al/(0001)sapphire substrates and polycrystalline films on (111)Pt/(111)MgO. For an optimal structure, the film needed much less oxygen from the gas phase compared to other oxide films. This paper describes pulsed-laser-deposited YMnO3 films on (111)Si investigated for metal-ferroelectric-semiconductor structure. By depositing an initial layer of deoxidized YMnO3-x films, we have succeeded in obtaining the preferred oriented-YMnO3 films on Si for the first time.
引用
收藏
页码：796 / 800
页数：5
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