Temperature dependence of capacitance/current-voltage characteristics of highly (0001)-oriented YMnO3 thin films on Si

被引：48
|
作者：
Yi, WC [1 ]
Seo, CS
Kwun, SI
Yoon, JG
机构：
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Univ Suwon, Dept Phys, Kyung Gi Do 445743, South Korea
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 07期
关键词：
D O I：
10.1063/1.1289067
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly (0001)-oriented YMnO3 thin films on Si(100) substrates were obtained by using a stable precursor solution and rapid thermal annealing at a low temperature of 650 degrees C in a chemical solution deposition process. Temperature-dependent capacitance-voltage (C-V) and current-voltage (I-V) characteristics were discussed in a metal-ferroelectric-semiconductor structure. At 300 K, the voltage-dependent increase of the memory window (Delta V) in the C-V curve and the asymmetric I-V curve were attributed to the formation of positive interfacial charges by field- and thermal-excited electron transport. On the other hand, at 220 K, the voltage-independent Delta V was attributed to ferroelectric polarization switching. (C) 2000 American Institute of Physics. [S0003-6951(00)04633-7].
引用
收藏
页码：1044 / 1046
页数：3
相关论文
共 50 条
  • [1] Preparation of epitaxial orthorhombic YMnO3 thin films and the current-voltage rectifying effect
    Li, S. Z.
    Yan, Z. B.
    Wei, T.
    Luo, S. J.
    Liu, B.
    Wang, K. F.
    Liu, J. -M.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 94 (04): : 975 - 980
  • [2] Ferroelectric characterization of highly (0001)-oriented YMnO3 thin films grown by chemical solution deposition
    Yi, WC
    Choe, JS
    Moon, CR
    Kwun, SI
    Yoon, JG
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (07) : 903 - 905
  • [3] Preparation of epitaxial orthorhombic YMnO3 thin films and the current–voltage rectifying effect
    S. Z. Li
    Z. B. Yan
    T. Wei
    S. J. Luo
    B. Liu
    K. F. Wang
    J.-M. Liu
    [J]. Applied Physics A, 2009, 94 : 975 - 980
  • [4] Memory window of highly c-axis oriented ferroelectric YMnO3 thin films
    Lee, HN
    Kim, YT
    Park, YK
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (25) : 3887 - 3889
  • [5] Characteristics of ferroelectric YMnO3 thin films for MFISFET by MOCVD
    Choi, KJ
    Shin, WC
    Yoon, SG
    [J]. INTEGRATED FERROELECTRICS, 2001, 34 (1-4) : 1541 - 1551
  • [6] TEMPERATURE HYSTERESIS OF CURRENT-VOLTAGE CHARACTERISTICS OF THIN SEMICONDUCTING FILMS
    KREMPASKY, J
    CERVENAK, J
    DIESKA, P
    KUBEK, J
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 6 (02): : 415 - +
  • [7] Ferroelectric characterization of highly, (0001)-oriented YMnO3 thin films grown by chemical solution deposition (vol 73, pg 903, 1998)
    Yi, WC
    Choe, JS
    Moon, CR
    Kwun, SI
    Yoon, JG
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2690 - 2690
  • [8] Microstructure control of YMnO3 thin films on Si (100) substrates
    Yoo, DC
    Lee, JY
    Kim, IS
    Kim, YT
    [J]. THIN SOLID FILMS, 2002, 416 (1-2) : 62 - 65
  • [9] Influence of temperature, thickness and intensity of illumination on the capacitance-voltage and current-voltage characteristics of coplanar ZnTe thin films
    Farag, A. A. M.
    Yahia, I. S.
    El-Metwally, E. G.
    [J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (02): : 204 - 212
  • [10] INFLUENCE OF TEMPERATURE ON THE CURRENT-VOLTAGE CHARACTERISTICS OF THIN AS2SE3 FILMS
    PANASYUK, LM
    MANUSHEVICH, GN
    GOGLIDZE, TI
    PROVOTOROV, VL
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (01): : 34 - 37
12345