Ferroelectric characterization of highly (0001)-oriented YMnO3 thin films grown by chemical solution deposition

被引：81
|
作者：
Yi, WC [1 ]
Choe, JS
Moon, CR
Kwun, SI
Yoon, JG
机构：
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Univ Suwon, Dept Phys, Kyung Gi Do 445743, South Korea
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 07期
关键词：
D O I：
10.1063/1.122443
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly (0001)-oriented thin films of YMnO3 were grown directly on Si substrates by chemical solution deposition. The crystallinity of the films was investigated by using x-ray diffraction: theta-2 theta scan, rocking curve, and pole figure. Analysis of the x-ray photoelectron spectroscopy data and Rutherford backscattering spectroscopy spectrum showed that the films had a single phase of stoichiometric YMnO3. The ferroelectric properties of YMnO3 were investigated by measuring the temperature dependence of the capacitance-voltage characteristics in the metal/ferroelectric/semiconductor structure. Screening of the ferroelectricity of YMnO3 thin him at room temperature was discussed in conjunction with the charge effects. (C) 1998 American Institute of Physics.
引用
收藏
页码：903 / 905
页数：3
相关论文
共 50 条
  • [1] Ferroelectric characterization of highly, (0001)-oriented YMnO3 thin films grown by chemical solution deposition (vol 73, pg 903, 1998)
    Yi, WC
    Choe, JS
    Moon, CR
    Kwun, SI
    Yoon, JG
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2690 - 2690
  • [2] Ferroelectric properties of YMnO3 thin films prepared by chemical solution deposition
    IL Cheon, C
    Yun, KY
    Kim, JS
    Kim, JH
    [J]. INTEGRATED FERROELECTRICS, 2001, 34 (1-4) : 1513 - 1520
  • [3] Synthesis of ferroelectric YMnO3 thin film by chemical solution deposition
    Suzuki, K
    Nishizawa, K
    Miki, T
    Kato, K
    [J]. ASIAN CERAMIC SCIENCE FOR ELECTRONICS I, 2002, 214-2 : 151 - 156
  • [4] Memory window of highly c-axis oriented ferroelectric YMnO3 thin films
    Lee, HN
    Kim, YT
    Park, YK
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (25) : 3887 - 3889
  • [5] Preparation of ferroelectric YMnO3 thin films for nonvolatile memory devices by metalorganic chemical vapor deposition
    Shin, WC
    Choi, KJ
    Yang, CH
    Park, JB
    Yoon, SG
    [J]. INTEGRATED FERROELECTRICS, 1998, 21 (1-4) : 319 - 329
  • [6] Ferroelectric properties and applications of YMnO3 thin films
    [J]. 2000, Sichuan Institute of Piezoelectric and Acoustooptic Technology, China (22):
  • [7] Temperature dependence of capacitance/current-voltage characteristics of highly (0001)-oriented YMnO3 thin films on Si
    Yi, WC
    Seo, CS
    Kwun, SI
    Yoon, JG
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (07) : 1044 - 1046
  • [8] Preparation and characterization of ferroelectric YMnO3 thin film
    Guo, HY
    Wilson, IH
    Xu, JB
    Cheung, WY
    Ke, N
    Sundaral, B
    Luo, EZ
    Lin, J
    Yu, J
    [J]. PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II, 2001, : 657 - 659
  • [9] Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors
    Choi, KJ
    Shin, WC
    Yoon, SG
    [J]. THIN SOLID FILMS, 2001, 384 (01) : 146 - 150
  • [10] Atomic layer deposition of YMnO3 thin films
    Choi, Ju H.
    Pham, Calvin
    Dorman, James
    Kim, Taeseung
    Chang, Jane P.
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 498
12345