Ferroelectric characterization of highly (0001)-oriented YMnO3 thin films grown by chemical solution deposition

被引：81
|
作者：
Yi, WC [1 ]
Choe, JS
Moon, CR
Kwun, SI
Yoon, JG
机构：
[1] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea
[2] Univ Suwon, Dept Phys, Kyung Gi Do 445743, South Korea
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 07期
关键词：
D O I：
10.1063/1.122443
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly (0001)-oriented thin films of YMnO3 were grown directly on Si substrates by chemical solution deposition. The crystallinity of the films was investigated by using x-ray diffraction: theta-2 theta scan, rocking curve, and pole figure. Analysis of the x-ray photoelectron spectroscopy data and Rutherford backscattering spectroscopy spectrum showed that the films had a single phase of stoichiometric YMnO3. The ferroelectric properties of YMnO3 were investigated by measuring the temperature dependence of the capacitance-voltage characteristics in the metal/ferroelectric/semiconductor structure. Screening of the ferroelectricity of YMnO3 thin him at room temperature was discussed in conjunction with the charge effects. (C) 1998 American Institute of Physics.
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收藏
页码：903 / 905
页数：3
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