Preparation of epitaxial orthorhombic YMnO3 thin films and the current-voltage rectifying effect

被引：17
|
作者：
Li, S. Z. [1 ,2 ]
Yan, Z. B. [1 ,2 ]
Wei, T. [1 ,2 ]
Luo, S. J. [1 ,2 ]
Liu, B. [1 ,2 ]
Wang, K. F. [1 ,2 ]
Liu, J. -M. [1 ,2 ]
机构：
[1] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 94卷 / 04期
基金：
中国国家自然科学基金;
关键词：
STABILIZATION; POLARIZATION; MEMORY; PHASE; FIELD;
D O I：
10.1007/s00339-008-4878-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial orthorhombic YMnO3(YMO) thin films on (001) Nb:SrTiO3(NSTO) substrates were prepared by pulsed laser deposition. The weak ferromagnetism at low temperature, probably ascribed to the stretched Mn-spin configuration along [010] direction, was identified. The dielectric anomaly at the spin-glass freezing point indicates clearly a spin-phonon (magnetoelectric) coupling which can be modulated by electric field. The as-prepared YMO/NSTO heterostructure exhibits significant current-voltage (I-V) rectifying effect over a broad temperature range.
引用
收藏
页码：975 / 980
页数：6
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