Sol-gel derived LaNiO3 thin films on ZrO2-buffered (100)Si substrates

被引：11

作者：

Yu, SH ^{[1
]}

Yao, K ^{[1
]}

Hock, FTE ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

CERAMICS INTERNATIONAL | 2004年 / 30卷 / 07期

关键词：

sol-gel processes; electrical conductivity; LaNiO3; thin film; YSZ;

D O I：

10.1016/j.ceramint.2003.12.062

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Perovskite LaNiO3 (LNO) thin films with a strong (100)-orientation were fabricated on yttrium-stabilized-zirconia (YSZ)-buffered silicon substrates using a sol-gel method. The YSZ buffer layer showed a stable tetragonal phase, and proved to be effective to suppress inter-diffusion between the Si substrates and the LNO films. Our obtained LNO films on the YSZ buffer layer exhibited a homogenous and smooth surface, with an average grain size below 0.1 mum. The resistivity of the LNO films was in the magnitude order of 10(-4) Omega cm. The crystallographic orientation and low resistivity make the sol-gel derived LNO films very attractive as the bottom electrode layer for perovskite oxide ceramic thin films. (C) 2004 Elsevier Ltd and Techna Group S.r.1. All rights reserved.

引用

页码：1253 / 1256

页数：4

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