Sol-gel derived LaNiO3 thin films on ZrO2-buffered (100)Si substrates

被引：11
|
作者：
Yu, SH [1 ]
Yao, K [1 ]
Hock, FTE [1 ]
机构：
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
CERAMICS INTERNATIONAL | 2004年 / 30卷 / 07期
关键词：
sol-gel processes; electrical conductivity; LaNiO3; thin film; YSZ;
D O I：
10.1016/j.ceramint.2003.12.062
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Perovskite LaNiO3 (LNO) thin films with a strong (100)-orientation were fabricated on yttrium-stabilized-zirconia (YSZ)-buffered silicon substrates using a sol-gel method. The YSZ buffer layer showed a stable tetragonal phase, and proved to be effective to suppress inter-diffusion between the Si substrates and the LNO films. Our obtained LNO films on the YSZ buffer layer exhibited a homogenous and smooth surface, with an average grain size below 0.1 mum. The resistivity of the LNO films was in the magnitude order of 10(-4) Omega cm. The crystallographic orientation and low resistivity make the sol-gel derived LNO films very attractive as the bottom electrode layer for perovskite oxide ceramic thin films. (C) 2004 Elsevier Ltd and Techna Group S.r.1. All rights reserved.
引用
收藏
页码：1253 / 1256
页数：4
相关论文
共 50 条
  • [21] Electrical properties of sol-gel deposited BaTiO3 thin films on Si(100) substrates
    Cho, CR
    Kwun, SI
    Noh, TW
    Jang, MS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (4A): : 2196 - 2199
  • [22] Electrical properties of sol-gel deposited BaTiO3 thin films on Si(100) substrates
    Cho, Chae Ryong
    Kwun, Sook Il
    Noh, Tae Won
    Jang, Min Su
    1997, JJAP, Minato-ku, Japan (36):
  • [23] Investigation of sol-gel derived ZrO2 thin films by nanoindentation
    Lucca, DA
    Klopfstein, M
    Ghisleni, R
    Gude, A
    Mehner, A
    Datchary, W
    CIRP ANNALS-MANUFACTURING TECHNOLOGY, 2004, 53 (01): : 475 - 478
  • [24] Characterization of Sol-Gel Derived and Crystallized ZrO2 Thin Films
    Shimizu, Hirofumi
    Konagai, Satoshi
    Ikeda, Masanori
    Nishide, Toshikazu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (10) : 1011011 - 1011016
  • [25] Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates
    Doescher, H.
    Lilienkamp, G.
    Iskra, P.
    Kazempoor, M.
    Daum, W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (04): : C5B5 - C5B11
  • [26] Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates
    Brooks, KG
    Kohli, M
    Taylor, DV
    Maeder, T
    Reaney, I
    Kholkin, A
    Muralt, P
    Setter, N
    ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 611 - 614
  • [27] Preparation Of LaNiO3/SrTiO3/LaNiO3 capacitor structure through sol-gel process
    Jia, Jiqiang
    Zhao, Gaoyang
    Lei, Li
    Wang, Xin
    CERAMICS INTERNATIONAL, 2016, 42 (08) : 9762 - 9768
  • [28] Electric properties of BiFeO3 films deposited on LaNiO3 by sol-gel process
    Liu, Zuli
    Liu, Hongri
    Du, Guihuan
    Zhang, Jian
    Yao, Kailun
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (04)
  • [29] Magnetic properties of sol-gel derived Ni-Zn ferrite thin films on yttria stabilized zirconia buffered Si(100)
    Bae, Seung-Young
    Kim, Chul-Sung
    Oh, Young-Jei
    Journal of Applied Physics, 1999, 85 (8 II A) : 5226 - 5228
  • [30] Magnetic properties of sol-gel derived Ni-Zn ferrite thin films on yttria stabilized zirconia buffered Si(100)
    Bae, SY
    Kim, CS
    Oh, YJ
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) : 5226 - 5228
12345