Sol-gel derived LaNiO3 thin films on ZrO2-buffered (100)Si substrates

被引：11
|
作者：
Yu, SH [1 ]
Yao, K [1 ]
Hock, FTE [1 ]
机构：
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
来源：
CERAMICS INTERNATIONAL | 2004年 / 30卷 / 07期
关键词：
sol-gel processes; electrical conductivity; LaNiO3; thin film; YSZ;
D O I：
10.1016/j.ceramint.2003.12.062
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Perovskite LaNiO3 (LNO) thin films with a strong (100)-orientation were fabricated on yttrium-stabilized-zirconia (YSZ)-buffered silicon substrates using a sol-gel method. The YSZ buffer layer showed a stable tetragonal phase, and proved to be effective to suppress inter-diffusion between the Si substrates and the LNO films. Our obtained LNO films on the YSZ buffer layer exhibited a homogenous and smooth surface, with an average grain size below 0.1 mum. The resistivity of the LNO films was in the magnitude order of 10(-4) Omega cm. The crystallographic orientation and low resistivity make the sol-gel derived LNO films very attractive as the bottom electrode layer for perovskite oxide ceramic thin films. (C) 2004 Elsevier Ltd and Techna Group S.r.1. All rights reserved.
引用
收藏
页码：1253 / 1256
页数：4
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