Passivation effects of alumina insulating layer on C60 thin-film field-effect transistors

被引：56
|
作者：
Horiuchi, K
Nakada, K
Uchino, S
Hashii, S
Hashimoto, A
Aoki, N
Ochiai, Y
Shimizu, M
机构：
[1] Chiba Univ, Dept Mat Technol, Inage Ku, Chiba 2638522, Japan
[2] Fuji Xerox Co Ltd, Corp Res Ctr, Nakai, Kanagawa 2590157, Japan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期
关键词：
D O I：
10.1063/1.1505746
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A covering of an alumina insulating layer was deposited on the top of a C-60 thin-film field-effect transistor (FET) by rf magnetron sputtering with Ar gas, in order to passivate the FET action from the degradation due to oxygen adsorption. The deposited alumina was amorphous and slightly oxygen deficient from the stoichiometry. The stability of FET action in air was considerably improved and no degradation has been detected even for more than one month. (C) 2002 American Institute of Physics.
引用
收藏
页码：1911 / 1912
页数：2
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