C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition

被引：30
|
作者：
Kobayashi, S. [1 ,3 ]
Takenobu, T. [1 ,3 ]
Mori, S. [1 ,3 ]
Fujiwara, A. [2 ,3 ]
Iwasa, Y. [1 ,3 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Japan Adv Inst Sci & Technol, Kanazawa, Ishikawa 9231292, Japan
[3] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2003年 / 4卷 / 04期
关键词：
C-60; Thin-film; Field-effect transistor; Mobility;
D O I：
10.1016/S1468-6996(03)00064-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report performance of C-60 thin-film field-effect transistors and characterizations of C-60 thin-films on SiO2 substrates fabricated by molecular beam deposition. Devices, fabricated and characterized under high vacuum without exposing to air, routinely showed current on/off ratios >10(8) and field-effect mobility in the range of 0.5-0.3 cm(2)/V s. The obtained mobility is comparable to the highest value among n-type organic thin-film transistors and close to that derived from the photocurrent measurements on C-60 thin-films. The grain size of C-60 thin-film, condensed in an fcc solid, increases with the substrate temperature, while the mobility did not exhibit a clear relation with substrate temperature. (C) 2003 Elsevier Ltd. All rights reserved.
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页数：5
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