Low-temperature metal-organic vapor-phase epitaxy growth and performance of 1.3-μm GaInNAs/GaAs single quantum well lasers

被引：12

作者：

Plaine, GY

Asplund, C

Sundgren, P

Mogg, S

Hammar, M

机构：

[1] Royal Inst Technol, KTH, Dept Microelect & Informat Technol, S-16440 Kista, Sweden

[2] Zarlink Semicond AB, S-17526 Jarfalla, Sweden

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 2B期

关键词：

GaInNAs; 1.3 mu m; long wavelength; metalorganic vapor phase deposition; vertical-cavity surface-emitting laser; quantum well; photoluminescence; low temperature growth;

D O I：

10.1143/JJAP.41.1040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaInNAs/GaAs quantum-well (Q V) lasers emitting at 1.3 mum. were grown using metal-organic vapor-phase epitaxy (MOVPE) in the limit of very low growth rate and temperature. The material was characterized by photoluminescence (PL) Spectroscopy as well as by implementation in broad-area (BA) edge-emitting lasers. While the PL intensity was found to decrease by more than two orders of magnitude between 1175 and 1350 mn, the corresponding BA laser threshold current showed a much more modest increase. For a 1.28-mum laser the threshold current was 1.2 kA/cm(2) (1200 pin long devices), with a slope efficiency 0.24 W/A per facet and T-0 = 100 K. Comparison between PL emission properties and BA laser performance revealed a complex relationship. A high PL intensity does not necessarily lead to low threshold-current lasers. In these cases, the FWHM seems to be the more relevant parameter for QW optimization.

引用

页码：1040 / 1042

页数：3

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