High performance 1.32 μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

We report on the growth of GaInNAs materials and lasers by molecular beam epitaxy (MBE) using a rf-plasma source. Optimal GaInNAS quantum well (QW) structures have been designed and grown in order to achieve the brightest and narrowest photoluminescence (PL) spectra beyond 1.30 mum. State-of-the-art GaInNAs/GaAs SQW lasers operating at 1.32 mum have been demonstrated. For a broad area oxide stripe, uncoated Fabry-Perot laser with a cavity length of 1600 mum, the threshold current density is 546 A/cm(2) at room temperature. Optical output up to 40 mW per facet under continuous wave operation was achieved for these uncoated lasers at room temperature.