Highly strained InGaAs/GaAs single-Quantum-Well lasers grown by molecular beam epitaxy

Highly strained InGaAs/GaAs Quantum Wells (QW) were grown by molecular beam epitaxy. The room-temperature photoluminescence (PL) peak wavelength as long as 1160 nm was obtained from QW with the In composition of 38% and the well width of 6.8 nm. The full-width at half-maximum of the PL peak is 22 meV, indicating a good quality. InGaAs/GaAs QW ridge-waveguide lasers with emission wavelength of 1120 nm were demonstrated. For 100μm-wide ridge-waveguide lasers with a cavity length of 800 μm, the kink-free output power up to 200 mW was achieved with the slope efficiency of 0.84 mW/mA under the continuous-wave operation. For 10 μm-wide ridge-waveguide lasers, the lowest threshold current density of 450 A/cm2 and the characteristic temperature of 90 K were obtained.