The Influence of Hydrogen on the Properties of Zinc Sulfide Thin Films Deposited by Magnetron Sputtering

被引：15

作者：

Xu, Hang ^{[1
]}

Wu, Lili ^{[1
]}

Wang, Wenwu ^{[1
]}

Zhang, Lixiang ^{[1
]}

Zhang, Jingquan ^{[1
]}

Li, Wei ^{[1
]}

Feng, Lianghuan ^{[1
]}

机构：

[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China

来源：

INTERNATIONAL JOURNAL OF PHOTOENERGY | 2014年 / 2014卷

关键词：

CHEMICAL-VAPOR-DEPOSITION; DOPED ZNO FILMS; BATH DEPOSITION; SOLAR-CELLS; AMBIENT; GROWTH; LAYERS;

D O I：

10.1155/2014/720560

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Zinc sulfide thin films have been deposited with hydrogen in Ar and Ar+H-2 atmosphere by radio frequency magnetron sputtering. The thickness, structural properties, composition, surface morphology, and optical and electrical properties of the films have been investigated. Effect of hydrogen on the properties of the film was studied. The results showed that hydrogen leads to better crystallinity and larger crystallite size of ZnS polycrystalline films. The band gaps of the films in Ar+H-2 are about 3.48 eV compared with 3.24 eV without hydrogen. It is also demonstrated that hydrogen can result in a better stoichiometric composition of the films.

引用

页数：6

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