Highly transparent ammonothermal bulk GaN substrates

被引：28
|
作者：
Jiang, Wenkan [1 ]
Ehrentraut, Dirk [1 ]
Downey, Bradley C. [1 ]
Kamber, Derrick S. [1 ]
Pakalapati, Rajeev T. [1 ]
Do Yoo, Hak [1 ]
D'Evelyn, Mark P. [1 ]
机构：
[1] Soraa Inc, Goleta, CA 93117 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 403卷
基金：
美国国家科学基金会;
关键词：
Annnonothermal crystal growth; Bulk GaN; Nitrides; GALLIUM-NITRIDE; CRYSTAL-GROWTH; DEFECTS;
D O I：
10.1016/j.jcrysgro.2014.06.002
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：18 / 21
页数：4
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