Non-polar and semi-polar ammonothermal GaN substrates

被引：43
|
作者：
Kucharski, R. [1 ]
Zajac, M. [1 ]
Doradzinski, R. [1 ]
Rudzinski, M. [2 ]
Kudrawiec, R. [3 ]
Dwilinski, R. [1 ]
机构：
[1] AMMONO SA, PL-00377 Warsaw, Poland
[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[3] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 02期
关键词：
CONTACTLESS ELECTROREFLECTANCE; CRYSTAL-GROWTH; ALGAN/GAN HETEROSTRUCTURES; GALLIUM NITRIDE; SPECTROSCOPY;
D O I：
10.1088/0268-1242/27/2/024007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we review the developments of producing non-polar (i.e. m-plane and a-plane) and semi-polar (i.e. (20.1)-plane) wafers by ammonothermal method. The growth method and polishing results are described. We succeeded in producing 26 mm x 26 mm non-and semi-polar wafers. These wafers possess outstanding structural and optical properties, with threading dislocation density of the order of 10(4) cm(-3). Detailed studies of homoepitaxial layers, as well as AlGaN heterostructures are also presented, showing the potential of studied ammonothermal substrates in the fabrication of optoelectronic devices.
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收藏
页数：15
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