Highly transparent ammonothermal bulk GaN substrates

被引：28

作者：

Jiang, Wenkan ^{[1
]}

Ehrentraut, Dirk ^{[1
]}

Downey, Bradley C. ^{[1
]}

Kamber, Derrick S. ^{[1
]}

Pakalapati, Rajeev T. ^{[1
]}

Do Yoo, Hak ^{[1
]}

D'Evelyn, Mark P. ^{[1
]}

机构：

[1] Soraa Inc, Goleta, CA 93117 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 403卷

基金：

美国国家科学基金会;

关键词：

Annnonothermal crystal growth; Bulk GaN; Nitrides; GALLIUM-NITRIDE; CRYSTAL-GROWTH; DEFECTS;

D O I：

10.1016/j.jcrysgro.2014.06.002

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：18 / 21

页数：4

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