Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor

被引：3
|
作者：
Chung, Pei-Kang [1 ]
Yen, Shun-Tung
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 18期
关键词：
Heat radiation - Terahertz waves - Phonons - Efficiency;
D O I：
10.1063/1.4901331
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13 mu W and a power conversion efficiency higher than a resistor by more than 20%. (C) 2014 AIP Publishing LLC.
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页数：4
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