Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor

被引：3

作者：

Chung, Pei-Kang ^{[1
]}

Yen, Shun-Tung

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 18期

关键词：

Heat radiation - Terahertz waves - Phonons - Efficiency;

D O I：

10.1063/1.4901331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13 mu W and a power conversion efficiency higher than a resistor by more than 20%. (C) 2014 AIP Publishing LLC.

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页数：4

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